N-channel enhancement-mode power MOSFET uses shielded-gate trench DMOS technology for low on-resistance and fast switching. The device is rated for 85 V drain-source voltage, 80 A package-limited continuous drain current, and 164 W power dissipation at 25°C. Maximum on-resistance is 5.2 mΩ at 10 V gate drive and 50 A drain current. It supports ±20 V gate-source voltage, 320 A pulsed drain current, and guaranteed avalanche energy of 361 mJ. The operating junction and storage temperature ranges are -55°C to 150°C in a TO-252 package.
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Lonten LSGG085R052 technical specifications.
| MOSFET channel type | N-channel |
| Drain-source voltage | 85V |
| Continuous drain current, package limit at 25°C | 80A |
| Continuous drain current, silicon limit at 25°C | 127A |
| Continuous drain current at 100°C | 80A |
| Pulsed drain current | 320A |
| Gate-source voltage | ±20V |
| Power dissipation at 25°C | 164W |
| Avalanche energy | 361mJ |
| Drain-source on-state resistance maximum at VGS=10V, ID=50A | 5.2mΩ |
| Drain-source on-state resistance typical at VGS=10V, ID=50A | 4.6mΩ |
| Gate threshold voltage minimum | 2.0V |
| Gate threshold voltage maximum | 4.0V |
| Total gate charge typical | 78.5nC |
| Input capacitance typical | 4527pF |
| Output capacitance typical | 653pF |
| Reverse transfer capacitance typical | 33pF |
| Junction-to-case thermal resistance | 0.76°C/W |
| Operating junction temperature range | -55 to +150°C |
| Package | TO-252 |
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