This device is a 60 V N-channel MOSFET in the DFN5060-8B package. It is rated for 30 A continuous drain current at TC = 25°C, 16 A at TC = 100°C, and 120 A pulsed drain current. The gate-to-source voltage rating is +20 V/-12 V, with avalanche current rated at 36 A and avalanche energy rated at 64.8 mJ. Power dissipation is rated at 104 W at TC = 25°C and 2.5 W at TA = 25°C, with an operating junction and storage temperature range of -50°C to +150°C. The datasheet states fast switching performance, improved dv/dt capability, RoHS compliance, and halogen-free material.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the LRC LN7462DT1WG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
LRC LN7462DT1WG technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | +20/-12V |
| Continuous Drain Current (TC=25°C) | 30A |
| Continuous Drain Current (TC=100°C) | 16A |
| Pulsed Drain Current | 120A |
| Avalanche Current | 36A |
| Avalanche Energy | 64.8mJ |
| Power Dissipation (TC=25°C) | 104W |
| Power Dissipation (TA=25°C) | 2.5W |
| Operating Junction and Storage Temperature Range | -50 to +150°C |
| Thermal Resistance Junction-to-Ambient | 35°C/W |
| Thermal Resistance Junction-to-Ambient (t≤10s) | 55°C/W |
| Thermal Resistance Junction-to-Case | 2.5°C/W |
| RoHS | Compliant |
| Halogen Free | Yes |
Download the complete datasheet for LRC LN7462DT1WG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
