This N-channel trench MOSFET is rated for 60 V drain-to-source voltage and is supplied in a DFN5060-8B package. It supports 12 A continuous drain current at 25 °C, 48 A pulsed drain current, and low drain-source on-resistance down to 10 mΩ maximum at VGS = 10 V. The device accepts up to ±20 V gate-to-source voltage, operates across a -55 °C to +150 °C junction and storage range, and dissipates up to 2.5 W at 25 °C. Typical dynamic characteristics include 1322 pF input capacitance and 15 nC total gate charge.
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LRC LN7466DT1AG technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ 25°C | 12A |
| Continuous Drain Current @ 70°C | 10A |
| Pulsed Drain Current | 48A |
| Power Dissipation @ 25°C | 2.5W |
| Power Dissipation @ 70°C | 1.6W |
| Operating Junction Temperature Min | -55°C |
| Operating Junction Temperature Max | 150°C |
| Thermal Resistance Junction-to-Ambient | 50°C/W |
| Thermal Resistance Junction-to-Case | 3°C/W |
| Avalanche Current | 14A |
| Avalanche Energy | 9.8mJ |
| Gate Threshold Voltage | 1.2 to 2.2V |
| Gate-Body Leakage Current | ±100nA |
| Zero Gate Voltage Drain Current | 1µA |
| Drain-Source On-Resistance @ VGS=10V | 10 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 15 maxmΩ |
| Diode Forward Voltage | 1.2 maxV |
| Total Gate Charge | 15 typnC |
| Input Capacitance | 1322 typpF |
| Output Capacitance | 667 typpF |
| Reverse Transfer Capacitance | 106 typpF |
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