This device is a single N-channel power MOSFET rated for 60 V drain-source and ±20 V gate-source operation. It supports 120 A continuous drain current and is offered in a D2-PAK package. The listed on-resistance is 2.1 mΩ typical and 2.9 mΩ maximum, with 2.7 mΩ typical and 4.1 mΩ maximum at a lower gate-drive condition. Listed gate-charge values are 175 nC total and 94 nC gate-drain.
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Maxpower Semiconductor MXP60N2P9UFL technical specifications.
| Transistor Type | Single-N |
| Drain-Source Voltage (Vds) | 60V |
| Gate-Source Voltage (Vgs) | ±20V |
| Continuous Drain Current (Id) | 120A |
| On-Resistance (RDS(on)) Typ | 2.1mΩ |
| On-Resistance (RDS(on)) Max | 2.9mΩ |
| On-Resistance (RDS(on)) Typ at Lower Gate Drive | 2.7mΩ |
| On-Resistance (RDS(on)) Max at Lower Gate Drive | 4.1mΩ |
| Total Gate Charge (Qg) | 175nC |
| Gate-Drain Charge (Qgd) | 94nC |
