This 60 V N-channel power MOSFET uses trench technology and is supplied in a TO-263-2L D2-PAK surface-mount package. It is rated for 192 A continuous drain current at TC=25°C, 766 A pulsed drain current, and 253 W power dissipation. The device specifies 2.5 mΩ typical and 3.2 mΩ maximum RDS(on) at VGS=10 V, with 109 nC typical total gate charge to help reduce switching losses. It also includes a fast body diode with 55 ns reverse recovery time and supports junction and storage temperatures from -55°C to 175°C.
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Maxpower Semiconductor MXP60N3P2AF technical specifications.
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 192A |
| Continuous Drain Current at Case Temperature 100°C | 135A |
| Pulsed Drain Current | 766A |
| Single Pulse Avalanche Energy | 685mJ |
| Power Dissipation | 253W |
| Operating and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.59°C/W |
| Thermal Resistance Junction-to-Ambient | 62°C/W |
| Drain-to-Source On-Resistance Typ | 2.5mΩ |
| Drain-to-Source On-Resistance Max | 3.2mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 6.2nF |
| Output Capacitance | 0.9nF |
| Reverse Transfer Capacitance | 0.2nF |
| Total Gate Charge | 109nC |
| Reverse Recovery Time | 55ns |
| Reverse Recovery Charge | 115nC |
Download the complete datasheet for Maxpower Semiconductor MXP60N3P2AF to view detailed technical specifications.
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