This device is a single N-channel power MOSFET rated for 60 V drain-source and ±20 V gate-source operation. It supports 201 A drain current and is listed with a typical threshold voltage of 2.6 V. The manufacturer table shows 3.2 mΩ typical on-resistance at VGS = 10 V and 109 nC typical total gate charge at VGS = 10 V. It is supplied in a TO-220-3L package.
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Maxpower Semiconductor MXP60N3P2AT technical specifications.
| Configuration | Single-N |
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 201A |
| Threshold Voltage | 2.6V |
| RDS(on) Typ @ VGS=10V | 3.2mΩ |
| Total Gate Charge Typ @ VGS=10V | 109nC |
| Package | TO-220-3L |
Download the complete datasheet for Maxpower Semiconductor MXP60N3P2AT to view detailed technical specifications.
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