This N-channel power MOSFET is rated for 60 V drain-source voltage and 120 A drain current. It uses a D2-PAK surface-mount package and supports up to ±20 V gate-source voltage. The published product table lists low on-resistance figures of 2.5/3.4 mΩ and 3.2/4.8 mΩ for two drive conditions. Listed gate-charge related values are 139 nC and 74 nC.
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Maxpower Semiconductor MXP60N3P4UFL technical specifications.
| Channel Type | N-Channel |
| Configuration | Single-N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 120A |
| On-Resistance Typ Condition 1 | 2.5mΩ |
| On-Resistance Max Condition 1 | 3.4mΩ |
| On-Resistance Typ Condition 2 | 3.2mΩ |
| On-Resistance Max Condition 2 | 4.8mΩ |
| Gate Charge Related Value 1 | 139nC |
| Gate Charge Related Value 2 | 74nC |
| Package | D2-PAK |
