This device is a single N-channel power MOSFET in MaxPower Semiconductor's MaxFET family. It is rated for 60 V drain-to-source voltage and ±20 V gate-to-source voltage. The device is listed with 160 A drain current capability and 3.2 mΩ and 3.6 mΩ on-resistance values on the manufacturer product table. It is offered in a D2-PAK package for surface-mount power applications.
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Maxpower Semiconductor MXP60N3P6BF technical specifications.
| Device Configuration | Single |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Drain Current (ID) | 160A |
| On-Resistance Value 1 | 3.2mΩ |
| On-Resistance Value 2 | 3.6mΩ |
| Package | D2-PAK |
