This device is a single N-channel power MOSFET rated for 60 V drain-to-source voltage and ±20 V gate-to-source voltage. The manufacturer lists 160 A drain current capability and drain-source on-resistance values of 3.2 mΩ and 3.6 mΩ at two gate-drive conditions. It is supplied in a TO-220-3L package and has a listed value of 100 for an additional manufacturer performance parameter on the product table.
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Maxpower Semiconductor MXP60N3P6BT technical specifications.
| Configuration | Single-N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 160A |
| Drain-Source On-Resistance | 3.2mΩ |
| Drain-Source On-Resistance | 3.6mΩ |
| Package | TO-220-3L |
| Manufacturer Table Parameter | 100 |
