This single N-channel MOSFET is rated for 60 V drain-to-source voltage and ±20 V gate-to-source voltage. It supports 111 A drain current in the listed D-PAK package variant. The device specifies 3.6 mΩ typical and 4.5 mΩ maximum on-resistance at 10 V gate drive. Typical total gate charge is listed as 69 nC at 10 V gate drive. It is part of the MaxFET family on the manufacturer product page.
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Maxpower Semiconductor MXP60N4P5AD technical specifications.
| Channel Type | Single-N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 111A |
| RDS(on) Typ @ VGS=10V | 3.6mΩ |
| RDS(on) Max @ VGS=10V | 4.5mΩ |
| Total Gate Charge Typ @ VGS=10V | 69nC |
| Package | D-PAK |
Download the complete datasheet for Maxpower Semiconductor MXP60N4P5AD to view detailed technical specifications.
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