This device is a 60 V N-channel power MOSFET in a TO-220-3L package. It uses MaxPower's trench technology and is specified for 143 A continuous drain current with 3.6 mΩ typical and 4.5 mΩ maximum on-resistance at 10 V gate drive. Typical dynamic characteristics include 69.5 nC total gate charge, 3.89 nF input capacitance, and 44 ns reverse recovery time for the body diode. The part is rated for 204 W power dissipation and a -55 °C to 175 °C operating and storage temperature range.
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Maxpower Semiconductor MXP60N4P5AT technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 143A |
| Continuous Drain Current at TC=100°C | 101A |
| Pulsed Drain Current | 573A |
| Power Dissipation | 204W |
| On-Resistance Typ | 3.6mΩ |
| On-Resistance Max | 4.5mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 3.89nF |
| Output Capacitance | 0.55nF |
| Reverse Transfer Capacitance | 0.17nF |
| Total Gate Charge | 69.5nC |
| Reverse Recovery Time | 44ns |
| Reverse Recovery Charge | 80nC |
| Junction-to-Case Thermal Resistance | 0.73°C/W |
| Operating and Storage Temperature Range | -55 to 175°C |
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