This device is a single N-channel power MOSFET in an I-PAK package. It is rated for 60 V drain-to-source voltage, ±20 V gate-to-source voltage, and 111 A drain current. The gate threshold voltage is 3.6 V, with 3.6 mΩ typical and 4.5 mΩ maximum on-resistance at VGS = 10 V. Typical total gate charge is 69 nC at VGS = 10 V.
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Maxpower Semiconductor MXP60N4P5AU technical specifications.
| Configuration | Single-N |
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 111A |
| Gate Threshold Voltage | 3.6V |
| On-Resistance (Typ) | 3.6 @ VGS=10VmΩ |
| On-Resistance (Max) | 4.5 @ VGS=10VmΩ |
| Total Gate Charge (Typ) | 69 @ VGS=10VnC |
| Package | I-PAK |
