This device is a 60 V N-channel power MOSFET in the TO-263-2L package, also listed on the product table as D2-PAK. It is rated for 130 A continuous drain current at 25 °C case temperature, 92 A at 100 °C, and 189 W power dissipation. The datasheet specifies 3.8 mΩ typical and 5.0 mΩ maximum drain-to-source on-resistance at 10 V gate drive, with 62 nC typical total gate charge. It also specifies a 2.0 V to 4.0 V gate threshold voltage, -55 °C to 175 °C operating and storage range, and a fast body diode with 40 ns typical reverse recovery time.
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Maxpower Semiconductor MXP60N5P0AF technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Continuous Drain Current at 100°C | 92A |
| Pulsed Drain Current | 521A |
| Power Dissipation | 189W |
| Single Pulse Avalanche Energy | 198mJ |
| Drain-to-Source On-Resistance Typ | 3.8mΩ |
| Drain-to-Source On-Resistance Max | 5.0mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 3.4nF |
| Output Capacitance | 0.49nF |
| Reverse Transfer Capacitance | 0.16nF |
| Total Gate Charge | 62nC |
| Reverse Recovery Time | 40ns |
| Reverse Recovery Charge | 77nC |
| Operating and Storage Temperature Range | -55 to 175°C |
Download the complete datasheet for Maxpower Semiconductor MXP60N5P0AF to view detailed technical specifications.
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