This device is a single N-channel power MOSFET in a D2-PAK package. It is rated for 60 V drain-source voltage, ±20 V gate-source voltage, and 132 A drain current. The threshold voltage is 4.1 V. Typical and maximum on-resistance at VGS = 10 V are 4.1 mΩ and 5 mΩ, and at VGS = 4.5 V are 4.8 mΩ and 6.7 mΩ. Typical total gate charge is 67 nC at VGS = 10 V and 34 nC at VGS = 4.5 V.
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Maxpower Semiconductor MXP60N5P0AFL technical specifications.
| Configuration | Single-N |
| Drain-Source Voltage (Vds) | 60V |
| Gate-Source Voltage (Vgs) | ±20V |
| Drain Current (Id) | 132A |
| Threshold Voltage (Vth) | 4.1V |
| Rds(on) Typ @ Vgs=10V | 4.1mΩ |
| Rds(on) Max @ Vgs=10V | 5mΩ |
| Rds(on) Typ @ Vgs=4.5V | 4.8mΩ |
| Rds(on) Max @ Vgs=4.5V | 6.7mΩ |
| Total Gate Charge Typ @ Vgs=10V | 67nC |
| Total Gate Charge Typ @ Vgs=4.5V | 34nC |
Download the complete datasheet for Maxpower Semiconductor MXP60N5P0AFL to view detailed technical specifications.
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