This device is a 60 V N-channel power MOSFET built on MaxPower's proprietary trench technology. It is specified for up to 130 A continuous drain current, 521 A pulsed drain current, and a maximum drain-to-source on-resistance of 5.0 mΩ at 10 V gate drive. The part is offered in a TO-220-3L package and is intended for high-efficiency DC/DC converters, synchronous rectification, and UPS inverter applications. It operates over a junction and storage temperature range of -55 °C to 175 °C and includes a fast-recovery body diode.
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Maxpower Semiconductor MXP60N5P0AT technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Continuous Drain Current at 100 °C | 92A |
| Pulsed Drain Current | 521A |
| Static Drain-to-Source On-Resistance | 5.0 maxmΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-to-Source Leakage Current | 1 maxµA |
| Gate-to-Source Leakage Current | ±100 maxnA |
| Input Capacitance | 3.4 typnF |
| Output Capacitance | 0.49 typnF |
| Reverse Transfer Capacitance | 0.16 typnF |
| Total Gate Charge | 62 typnC |
| Gate-to-Source Charge | 20 typnC |
| Gate-to-Drain Charge | 18 typnC |
| Turn-On Delay Time | 16 typns |
| Rise Time | 20 typns |
| Turn-Off Delay Time | 35 typns |
| Fall Time | 14 typns |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 40 typns |
| Reverse Recovery Charge | 77 typnC |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance, Junction-to-Case | 0.79°C/W |
| Thermal Resistance, Junction-to-Ambient | 72°C/W |
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