This device is a 60 V N-channel power MOSFET in a TO-220-3L package. It is rated for 130 A continuous drain current at 25 °C case temperature, 521 A pulsed drain current, and 189 W power dissipation. The MOSFET provides a maximum drain-source on-resistance of 5.0 mΩ at 10 V gate drive, with 3.8 mΩ typical. It has 62 nC typical total gate charge, 40 ns typical reverse recovery time, and a 0.9 V typical body-diode forward voltage at 80 A. The operating and storage junction temperature range is -55 °C to 175 °C.
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Maxpower Semiconductor MXP60N5P0ATL technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Continuous Drain Current at 100°C Case | 92A |
| Pulsed Drain Current | 521A |
| Power Dissipation | 189W |
| Single Pulse Avalanche Energy | 198mJ |
| Drain-Source On-Resistance | 5.0 max at VGS=10V, ID=80AmΩ |
| Drain-Source On-Resistance | 3.8 typ at VGS=10V, ID=80AmΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 3.4 typnF |
| Output Capacitance | 0.49 typnF |
| Reverse Transfer Capacitance | 0.16 typnF |
| Total Gate Charge | 62 typnC |
| Reverse Recovery Time | 40 typns |
| Reverse Recovery Charge | 77 typnC |
| Operating and Storage Temperature Range | -55 to 175°C |
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