This device is a 60 V N-channel power MOSFET in a TO-263-2L surface-mount package. It provides 5.5 mΩ typical drain-source on-resistance at 10 V gate drive and supports 97 A continuous drain current at 25 °C case temperature. The MOSFET is rated for 149 W power dissipation, 389 A pulsed drain current, and a -55 °C to 175 °C operating and storage temperature range. Dynamic characteristics include 45 nC total gate charge and 36 ns reverse recovery time.
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Maxpower Semiconductor MXP60N7P0AF technical specifications.
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 97A |
| Continuous Drain Current (Tc=100°C) | 69A |
| Pulsed Drain Current | 389A |
| Power Dissipation | 149W |
| On-Resistance | 5.5 typ at VGS=10VmΩ |
| On-Resistance | 7.0 max at VGS=10VmΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 45nC |
| Input Capacitance | 2.45nF |
| Output Capacitance | 0.34nF |
| Reverse Transfer Capacitance | 0.11nF |
| Reverse Recovery Time | 36ns |
| Operating and Storage Temperature Range | -55 to 175°C |
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