This single N-channel power MOSFET is rated for 60 V drain-source and ±20 V gate-source operation. The device is specified for 70 A continuous drain current in a MaxPAK (5x6) package. Typical on-resistance is 5.50 mΩ at VGS = 10 V with 7.00 mΩ maximum, and the gate threshold voltage is 2 to 4 V. Typical total gate charge is 45 nC at VGS = 10 V.
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Maxpower Semiconductor MXP60N7P0AG technical specifications.
| Configuration | Single-N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 70A |
| Gate Threshold Voltage | 2 to 4V |
| RDS(on) Typ @ VGS=10V | 5.50mΩ |
| RDS(on) Max @ VGS=10V | 7.00mΩ |
| Total Gate Charge Typ @ VGS=10V | 45.00nC |
| Package | MaxPAK (5x6) |
