N-channel power MOSFET uses an advanced trench cell structure for high-speed switching. The device is rated for 100 V drain-source voltage and 50 A continuous drain current, with pulsed drain current up to 150 A. Drain-source on-resistance is specified at 7 mΩ maximum with 10 V gate drive and 10 mΩ maximum with 4.5 V gate drive. The DFN5060 package has moisture sensitivity level 1 and epoxy meeting UL 94 V-0 flammability requirements. Operating junction and storage temperature ranges are both -55 °C to +150 °C.
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| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 50A |
| Pulsed Drain Current | 150A |
| Single Pulse Avalanche Energy | 75mJ |
| Total Power Dissipation | 105W |
| Thermal Resistance Junction to Case | 1.67°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Storage Temperature Range | -55 to +150°C |
| Drain-Source On-Resistance at 10 V | 7 maxmΩ |
| Drain-Source On-Resistance at 4.5 V | 10 maxmΩ |
| Gate Threshold Voltage | 1 min, 2 typ, 3 maxV |
| Input Capacitance | 2808pF |
| Output Capacitance | 961pF |
| Reverse Transfer Capacitance | 23pF |
| Total Gate Charge | 50nC |
| Moisture Sensitivity Level | 1 |
