This N-channel MOSFET is rated for 60 V drain-source voltage and 75 A continuous drain current. It uses split gate trench MOSFET technology and is housed in a DFN5060 package with low thermal resistance. The device specifies a maximum drain-source on-resistance of 6 mΩ at 10 V gate drive and 20 A drain current. It operates across a junction temperature range of -55 °C to +150 °C and supports pulsed drain current up to 240 A. The part is described as a halogen-free green device with a lead-free finish and RoHS-compliant construction.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the MCC MCAC75N06YB datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
MCC MCAC75N06YB technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 75A |
| Pulsed Drain Current | 240A |
| Total Power Dissipation | 35W |
| Single Pulsed Avalanche Energy | 180mJ |
| Drain-Source On-Resistance | 6 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Gate Leakage Current | ±100nA |
| Zero Gate Voltage Drain Current | 1µA |
| Input Capacitance | 2028pF |
| Output Capacitance | 756pF |
| Reverse Transfer Capacitance | 41pF |
| Total Gate Charge | 34nC |
| Reverse Recovery Time | 56ns |
| Thermal Resistance Junction-to-Case | 3.5°C/W |
| Operating Junction Temperature | -55 to +150°C |
| Halogen Free | Yes |
| RoHS | Compliant |
Download the complete datasheet for MCC MCAC75N06YB to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
