This device is an N-channel trench MOSFET rated for 60 V drain-to-source voltage and 80 A continuous drain current. It is supplied in a DFN5060 surface-mount package and is specified for junction operation from -55°C to 150°C. The MOSFET provides low on-resistance of 4.2 mΩ maximum at 10 V gate drive and 5.2 mΩ maximum at 4.5 V gate drive. It is rated for 85 W power dissipation at case temperature and is identified as RoHS compliant, REACH unaffected, and halogen free.
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MCC MCAC80N06Y technical specifications.
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 80A |
| Pulsed Drain Current (Idm) | 320A |
| Power Dissipation | 85W |
| Drain-Source On-Resistance (Rds(on)) @ 10V | 4.2 maxmΩ |
| Drain-Source On-Resistance (Rds(on)) @ 4.5V | 5.2 maxmΩ |
| Gate Threshold Voltage (Vgs(th)) | 1.2 to 2.5V |
| Gate-Source Voltage (Vgs) | ±20V |
| Input Capacitance (Ciss) | 3783 typpF |
| Output Capacitance (Coss) | 810 typpF |
| Reverse Transfer Capacitance (Crss) | 26 typpF |
| Total Gate Charge (Qg) @ 10V | 67nC |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.47°C/W |
| Avalanche Energy (EAS) | 400mJ |
| Body Diode Continuous Current (Is) | 80A |
| Reverse Recovery Time (trr) | 52ns |
| RoHS | ROHS3 Compliant |
| REACH | REACH Unaffected |
| Halogen Free | Yes |
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