N-channel power MOSFET uses split-gate trench technology in a DFN5060 surface-mount package. The device is rated for 80 V drain-source voltage, 80 A continuous drain current, and 320 A pulsed drain current. Maximum on-resistance is 3.5 mΩ at 10 V gate drive, with 102 nC typical total gate charge and 35 W power dissipation. Operating and storage junction temperature ranges extend from -55 °C to 150 °C, and the device is specified as halogen-free, green, lead-free, and RoHS compliant.
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| Transistor Type | N-channel MOSFET |
| Number of Functions | Single |
| Drain-Source Voltage | 80V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| Drain-Source On-Resistance Max at VGS=10V | 0.0035Ω |
| Drain-Source On-Resistance Max at VGS=6V | 5mΩ |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
| Power Dissipation | 35W |
| Single Pulsed Avalanche Energy | 312mJ |
| Input Capacitance | 5575pF |
| Output Capacitance | 747pF |
| Reverse Transfer Capacitance | 83pF |
| Total Gate Charge | 102nC |
| Gate-Drain Charge | 26nC |
| Junction Temperature Max | 150°C |
| Thermal Resistance Junction-to-Case | 3.5°C/W |
| Component Weight | 0.0875g |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
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