This single N-channel power MOSFET is rated for 60 V drain-source voltage and 90 A continuous drain current. It provides a maximum drain-source on-resistance of 3.2 mΩ at 10 V gate drive and is housed in the DFN5060 package. The device supports up to ±20 V gate-source voltage, 35 W power dissipation, and 150 °C maximum junction temperature. It is specified with 450 mJ single-pulse avalanche energy, 340 A pulsed drain current, 4692 pF input capacitance, and 80 nC total gate charge. MCC lists the part as obsoleted and packages it in tape and reel at 5000 pieces per reel.
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MCC MCAC90N06Y technical specifications.
| Number of Functions | 1 |
| Channel Type | N |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 90A |
| Drain-Source On-Resistance RDS(on) Max @ VGS=10V | 0.0032Ω |
| Gate Threshold Voltage VGS(th) Min | 2V |
| Gate Threshold Voltage VGS(th) Max | 4V |
| Junction Temperature Max | 150°C |
| Single Pulsed Avalanche Energy (EAS) | 450mJ |
| Pulsed Drain Current (IDM) | 340A |
| Input Capacitance (Ciss) | 4692pF |
| Output Capacitance (Coss) | 1619pF |
| Power Dissipation (PD) | 35W |
| Total Gate Charge (Qg) | 80nC |
| Gate-Drain Charge (Qgd) | 19nC |
| Halogen Free | Yes |
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