N-channel power MOSFET uses split-gate trench technology in a DFN5060 surface-mount package. The device is rated for 100 V drain-source voltage, 90 A continuous drain current at 25 °C case temperature, and 120 W total power dissipation. Maximum on-resistance is 4.8 mΩ at 10 V gate drive and 20 A drain current, with 60 nC typical total gate charge. Operating junction and storage temperature ranges extend from -55 °C to 150 °C, and the package has 1.04 °C/W typical junction-to-case thermal resistance.
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| Channel Type | N-channel |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 90 at TC=25°C; 57 at TC=100°CA |
| Pulsed Drain Current | 360A |
| Total Power Dissipation | 120W |
| Single Pulsed Avalanche Energy | 400mJ |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Drain-Source Breakdown Voltage | 100 minV |
| Gate Threshold Voltage | 2 min, 2.8 typ, 4 maxV |
| Drain-Source On-Resistance at VGS=10V | 4.1 typ, 4.8 maxmΩ |
| Drain-Source On-Resistance at VGS=6V | 5.6 typ, 6.5 maxmΩ |
| Input Capacitance | 4458 typpF |
| Output Capacitance | 1921 typpF |
| Reverse Transfer Capacitance | 20 typpF |
| Total Gate Charge | 60 typnC |
| Gate-Source Charge | 17 typnC |
| Gate-Drain Charge | 10 typnC |
| Junction-to-Case Thermal Resistance | 1.04°C/W |
| RoHS | Compliant |
| Lead Free | Lead free finish |
| Halogen Free | Green device |
| Moisture Sensitivity Level | MSL 1 |
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