N-channel power MOSFET provides a 100 V drain-source rating and 130 A continuous drain-current capability in a D2-PAK package. The device has low on-resistance of 4.0 mΩ typical and 4.6 mΩ maximum at 10 V gate drive and 60 A drain current. It supports fast switching with 28.2 ns typical turn-on delay, 81.9 ns typical turn-off delay, and 101.6 nC typical total gate charge. The MOSFET operates over a -55 °C to 150 °C junction temperature range and is rated for 192 W power dissipation at 25 °C case temperature.
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| FET Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Pulsed Drain Current | 390A |
| Power Dissipation | 192W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction to Case | 0.65°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 4.0 typ, 4.6 maxmΩ |
| Input Capacitance | 6124.6 typpF |
| Output Capacitance | 792.3 typpF |
| Reverse Transfer Capacitance | 15.1 typpF |
| Total Gate Charge | 101.6 typnC |
| Turn-On Delay Time | 28.2 typns |
| Rise Time | 7.5 typns |
| Turn-Off Delay Time | 81.9 typns |
| Fall Time | 20.1 typns |
| Diode Forward Voltage | 1.3 maxV |
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