This device is an N-channel enhancement-mode field effect transistor in a D2PAK package. It is rated for 60 V drain-source voltage, 150 A continuous drain current at 25°C case temperature, and 500 A pulsed drain current. The MOSFET provides low on-resistance with a 9.22 mΩ maximum static drain-source on-resistance and supports 550 mJ avalanche energy. Power dissipation is rated to 187 W at 25°C case temperature, and the junction and storage temperature range is -55°C to 175°C.
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MCC MCB150N06YB technical specifications.
| Transistor Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 150A |
| Continuous Drain Current (Tc=100°C) | 105A |
| Pulsed Drain Current | 500A |
| Avalanche Energy | 550mJ |
| Power Dissipation (Tc=25°C) | 187W |
| Power Dissipation (Tc=100°C) | 94W |
| Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance, Junction-to-Case | 0.80°C/W |
| Static Drain-Source On-Resistance | 9.22 maxmΩ |
| Input Capacitance | 3800pF |
| Output Capacitance | 430pF |
| Reverse Transfer Capacitance | 190pF |
| Total Gate Charge | 69nC |
| Turn-On Delay Time | 18ns |
| Turn-On Rise Time | 35ns |
| Turn-Off Delay Time | 44ns |
| Turn-Off Fall Time | 23ns |
| Body Diode Reverse Recovery Time | 53ns |
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