This device is a split-gate trench N-channel MOSFET rated for 60 V drain-to-source voltage and 200 A continuous drain current. It is supplied in a D2-PAK package and is designed for low on-resistance, with 2.5 mΩ typical at 10 V gate drive and 3.4 mΩ typical at 6 V gate drive. The part supports pulsed drain current up to 680 A and total power dissipation up to 260 W. Its operating junction and storage temperature range is -55°C to +150°C, and junction-to-case thermal resistance is 0.48°C/W. The device has a lead-free finish and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the MCC MCB200N06YA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
MCC MCB200N06YA technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 200A |
| Pulsed Drain Current | 680A |
| Power Dissipation | 260W |
| Single Pulsed Avalanche Energy | 640mJ |
| Operating Junction Temperature Range | -55 to +150°C |
| Storage Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 0.48°C/W |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Drain-Source On-Resistance @ VGS=10V | 2.5 typ, 3.2 maxmΩ |
| Drain-Source On-Resistance @ VGS=6V | 3.4 typ, 4.3 maxmΩ |
| Input Capacitance | 4165pF |
| Total Gate Charge | 65nC |
| Reverse Recovery Time | 58ns |
| RoHS | Compliant |
| Lead Finish | Lead Free |
Download the complete datasheet for MCC MCB200N06YA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
