This device is an N-channel enhancement-mode field effect transistor in a TO-220 package. It is rated for 55 V drain-source breakdown voltage, 12 A continuous drain current, and 1100 mJ single-pulse avalanche energy at 25°C unless otherwise specified. The datasheet lists a gate-threshold voltage range of 2.0 V to 4.0 V and a maximum static drain-source on-resistance of 5.5 mΩ at VGS = 10 V. Operating junction temperature and storage temperature are both specified from -55°C to +150°C.
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MCC MCP55H12 technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Breakdown Voltage | 55V |
| Continuous Drain Current | 12A |
| Single Pulsed Avalanche Energy | 1100mJ |
| Gate-Source Voltage | ±20V |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Operating Junction Temperature | -55 to +150°C |
| Storage Temperature | -55 to +150°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-Source On-Resistance Max | 5.5mΩ |
| Forward Transconductance | 50S |
| Input Capacitance | 4900pF |
| Output Capacitance | 470pF |
| Reverse Transfer Capacitance | 460pF |
| Turn-On Delay Time | 20ns |
| Turn-On Rise Time | 19ns |
| Turn-Off Delay Time | 70ns |
| Turn-Off Fall Time | 30ns |
| Total Gate Charge | 125nC |
| Package | TO-220 |
