This device is a single N-channel power MOSFET rated for 60 V drain-source voltage and 90 A continuous drain current. It offers low drain-source on-resistance of 7.5 mΩ maximum at 10 V gate drive and 10 mΩ maximum at 4.5 V gate drive. The part is rated for 83 W power dissipation, 141 mJ single-pulse avalanche energy, and 360 A pulsed drain current. It is supplied in a through-hole TO-220AB(H) package and supports junction temperatures up to 150 °C.
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MCC MCP90N06Y technical specifications.
| Channel Type | N |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 90A |
| RDS(on) Max @ VGS=10V | 0.0075Ω |
| RDS(on) Max @ VGS=4.5V | 0.01Ω |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Max | 2.5V |
| Junction Temperature Max | 150°C |
| Single Pulsed Avalanche Energy | 141mJ |
| Pulsed Drain Current (IDM) | 360A |
| Input Capacitance (Ciss) | 1949pF |
| Output Capacitance (Coss) | 369pF |
| Power Dissipation | 83W |
| Total Gate Charge (Qg) | 32nC |
| Gate-Drain Charge (Qgd) | 6.6nC |
| RoHS | Yes |
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