This device is an N-channel power MOSFET rated for 60 V drain-to-source voltage and 12 A continuous drain current at 25°C junction temperature. It is supplied in an 8-SOP surface-mount package and has a maximum on-resistance of 9 mΩ at 12 A and 10 V gate drive. The MOSFET supports 4.5 V and 10 V drive levels, with a maximum gate charge of 31 nC and maximum input capacitance of 1988 pF at 30 V. It operates over a -55°C to 150°C junction temperature range, dissipates up to 3.1 W, and is listed as RoHS3 compliant.
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MCC MCQ12N06 technical specifications.
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) @ 25°C | 12A |
| Power Dissipation (Max) | 3.1W |
| Vgs(th) (Max) @ Id | 2.5 @ 250µAV |
| Gate Charge (Qg) (Max) @ Vgs | 31 @ 10 VnC |
| Input Capacitance (Ciss) (Max) @ Vds | 1988 @ 30 VpF |
| Vgs (Max) | ±20V |
| Operating Temperature | -55 to 150 (TJ)°C |
| Drive Voltage | 4.5, 10V |
| Rds On (Max) @ Id, Vgs | 9 @ 12A, 10VmOhm |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154 in, 3.90mm Width) |
| RoHS | ROHS3 Compliant |
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