TIP147

PNP epitaxial silicon Darlington power transistor with monolithic construction and integrated base-emitter shunt resistors. It supports up to -100 V collector-emitter voltage, -10 A continuous collector current, and 125 W power dissipation at a 25 °C case temperature. Minimum DC current gain is 1000 at -5 A and 500 at -10 A, with collector-emitter saturation voltage as low as 2 V at -5 A. The device is specified for junction temperatures up to 150 °C and is supplied in a TO-3P style power package. It is intended as the complementary device to matching NPN Darlington power transistors and is marked as discontinued in the referenced datasheet.