TIP42C

PNP epitaxial silicon power transistor for medium-power linear and switching applications. It is specified for up to 100 V collector-emitter voltage and 6 A continuous collector current, with 10 A pulsed collector capability. The device is housed in a 3-lead TO-220 package and is complementary to the TIP41 series. At a 25 °C case temperature it supports 65 W collector dissipation, and the junction temperature extends to 150 °C with storage down to -65 °C. Typical electrical characteristics include a minimum DC current gain of 30 at 0.3 A and a 3 MHz current-gain bandwidth product at 500 mA.