The MCAC4D4N04YL-TP is an N-channel enhancement mode MOSFET utilizing split gate trench technology. It is designed to minimize power losses with high density cell design and offers a low drain-source on-resistance of typically 0.38 mOhms. It features an operating junction temperature of up to 175°C and is housed in a DFN5060 package.
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Technical Specifications
Micro Commercial Components MCAC4D4N04YL-TP technical specifications.
General
| Drain-Source Breakdown Voltage | 40V |
| Continuous Drain Current | 440A |
| Drain-Source On-Resistance (Max) | 0.44mΩ |
| Gate-Source Threshold Voltage (Max) | 4.0V |
| Total Gate Charge (Typ) | 151nC |
| Total Power Dissipation | 230W |
| Operating Junction Temperature | -55 to +175°C |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
| Moisture Sensitivity Level | 1 |
Datasheet
Micro Commercial Components MCAC4D4N04YL-TP Datasheet
Download the complete datasheet for Micro Commercial Components MCAC4D4N04YL-TP to view detailed technical specifications.
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