The MCTL011N20YH-TP is an N-channel enhancement mode MOSFET utilizing Split Gate Trench (SGT) technology. It features high density cell design for ultra low RDS(on), fully characterized avalanche voltage and current, and is designed for high efficiency power switching applications. It is AEC-Q101 qualified and comes in a TOLL package for improved thermal performance.
Quick Jump:
Technical Specifications
Micro Commercial Components MCTL011N20YH-TP technical specifications.
General
| Drain-Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 150A |
| Drain-Source On-Resistance (Rds(on)) | 11mΩ |
| Gate-Source Threshold Voltage (Vgs(th)) | 3.0 - 5.0V |
| Total Gate Charge (Qg) | 100nC |
| Power Dissipation (Pd) | 375W |
| Operating Junction Temperature | -55 to +175°C |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
| Aec-q101 | Qualified |
| Moisture Sensitivity Level | 1 |
Datasheet
Micro Commercial Components MCTL011N20YH-TP Datasheet
Download the complete datasheet for Micro Commercial Components MCTL011N20YH-TP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.