This N-channel super-junction power MOSFET is rated for 600 V drain-source voltage and 47 A continuous drain current at 25°C case temperature. It is supplied in a TO-247 package and specifies a maximum 91 mΩ drain-source on-resistance at VGS = 10 V. The device supports up to 278 W total power dissipation, 300 mJ single-pulse avalanche energy, and ±30 V gate-source voltage. Operating and storage junction temperature range from -55°C to +150°C. The BP ordering option is tube packaged, and the datasheet identifies the device as halogen-free, lead-free, and RoHS compliant.
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Micro Commercial Components MSJW47N60A-BP technical specifications.
| Channel Type | N-Channel |
| Technology | Super-Junction |
| Drain-Source Voltage | 600V |
| Gate-Source Voltage | ±30V |
| Continuous Drain Current (Tc=25°C) | 47A |
| Continuous Drain Current (Tc=100°C) | 30A |
| Pulsed Drain Current | 185A |
| Total Power Dissipation | 278W |
| Single Pulsed Avalanche Energy | 300mJ |
| Drain-Source On-Resistance (max) | 91mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Thermal Resistance Junction-to-Ambient | 36°C/W |
| Thermal Resistance Junction-to-Case | 0.45°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Storage Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Lead Free Finish | Yes |
| Halogen Free | Yes |
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