The SI01P10-TP is a P-Channel enhancement mode field effect transistor. It features a high density cell design for low RDS(on), ruggedness, and reliability, specifically designed for high-side switching and power management applications in a compact SOT-23 package.
Power0.35W
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Technical Specifications
Micro Commercial Components SI01P10-TP technical specifications.
General
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 1.1A |
| Static Drain-Source On-Resistance | 450mOhm |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 0.35W |
| Operating junction Temperature | -55 to +150°C |
| Gate Threshold Voltage | 1.0 to 2.5V |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
Datasheet
Micro Commercial Components SI01P10-TP Datasheet
Download the complete datasheet for Micro Commercial Components SI01P10-TP to view detailed technical specifications.
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