The DN2530N3-G P003 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 53A and a drain to source voltage of 300V. The device has a drain to source resistance of 12R and a gate to source voltage of 20V. It can handle a maximum power dissipation of 740mW and has a turn-off delay time of 15ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microchip DN2530N3-G P003 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 15ns |
| RoHS | Compliant |
Download the complete datasheet for Microchip DN2530N3-G P003 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
