The DN2530N3-P003-G is a TO-92 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 200mA and a drain to source breakdown voltage of 300V. The device has a drain to source resistance of 12 ohms and a power dissipation of 740mW. The MOSFET's fall time and turn-off delay time are both 15ns.
PackageTO-92
Resistance12R
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip DN2530N3-P003-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 12R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 12R |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip DN2530N3-P003-G Datasheet
Download the complete datasheet for Microchip DN2530N3-P003-G to view detailed technical specifications.
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