The LND150N3-P003-G is a TO-92 packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 30mA and a drain to source breakdown voltage of 500V. The device can dissipate up to 740mW of power. It has a gate to source voltage of 20V and a resistance of 1000 ohms. The turn-off delay time is 100ns and the fall time is 450ns.
Microchip LND150N3-P003-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 30mA |
| Drain to Source Breakdown Voltage | 500V |
| Fall Time | 450ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 1000R |
| Turn-Off Delay Time | 100ns |
| RoHS | Compliant |
No datasheet is available for this part.
