The TN0104N3-G P002 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of up to 53A and a maximum power dissipation of 740mW. The device features a drain to source voltage of 40V and a gate to source voltage of 20V. The TO-92-3 package is suitable for through-hole mounting and is available in tape and reel packaging.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip TN0104N3-G P002 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 6ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip TN0104N3-G P002 Datasheet
Download the complete datasheet for Microchip TN0104N3-G P002 to view detailed technical specifications.
No datasheet is available for this part.