The TN0110N3-GP003 is a single N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 350mA and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 4.5 ohms and a maximum power dissipation of 1W. It is packaged in a TO-92-3 case and available in quantities of 2000 per reel. The device is suitable for use in a variety of applications where a high current and high voltage are required.
Microchip TN0110N3-GP003 technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 2ns |
| Weight | 0.016oz |
| RoHS | Not Compliant |
No datasheet is available for this part.
