The TN0110N3-P003-G is a TO-92 packaged N-channel MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 2A. It has a gate to source voltage of 20V and a power dissipation of 1W. The device is available in a tape and reel packaging with 2000 units per package.
Microchip TN0110N3-P003-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 3R |
| RoHS | Compliant |
No datasheet is available for this part.
