The TN0606N3-P002-G is a TO-92 packaged N-channel MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 500mA. It has a drain to source resistance of 1.5 ohms and a gate to source voltage of 20V. The device is rated for a power dissipation of 1W and is available in quantities of 2000 per reel.
PackageTO-92
Resistance1.5R
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0606N3-P002-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 1.5R |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN0606N3-P002-G Datasheet
Download the complete datasheet for Microchip TN0606N3-P002-G to view detailed technical specifications.
No datasheet is available for this part.