The TN0606N3-P013-G is a TO-92 packaged N-channel MOSFET with a continuous drain current of 500mA and a drain to source breakdown voltage of 60V. It has a drain to source resistance of 1.5 ohms and a gate to source voltage of 20V. This device is suitable for applications requiring a high level of power dissipation, up to 1W. The TN0606N3-P013-G is available in tape and reel packaging with a quantity of 2000 units per reel.
PackageTO-92
Resistance1.5R
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip TN0606N3-P013-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 1.5R |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN0606N3-P013-G Datasheet
Download the complete datasheet for Microchip TN0606N3-P013-G to view detailed technical specifications.
No datasheet is available for this part.