The TN5325N3-G P003 is a TO-92-3 packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 215mA and a drain to source voltage of 250V. The device has a maximum power dissipation of 740mW and a drain to source resistance of 8 ohms. The gate to source voltage is 20V and the turn-off delay time is 25ns. The device is available in a tape and reel packaging with 2000 units per package.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip TN5325N3-G P003 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 215mA |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN5325N3-G P003 Datasheet
Download the complete datasheet for Microchip TN5325N3-G P003 to view detailed technical specifications.
No datasheet is available for this part.