The TP2535N3-G P003 is a P-channel FET from Microchip, packaged in a TO-92-3 case. It can handle a maximum continuous drain current of 53A and a maximum drain to source voltage of -350V. The device has a maximum gate to source voltage of 20V and a maximum power dissipation of 740mW. Operating temperatures range from -55°C to 150°C.
PackageTO-92-3
PolarityP-CHANNEL
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Technical Specifications
Microchip TP2535N3-G P003 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | -350V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2535N3-G P003 Datasheet
Download the complete datasheet for Microchip TP2535N3-G P003 to view detailed technical specifications.
No datasheet is available for this part.