The TP2535N3-P003-G is a P-channel MOSFET from Microchip, packaged in a TO-92 case and available in tape and reel packaging. It can handle a continuous drain current of -86mA and has a drain to source breakdown voltage of -350V. The device has a drain to source resistance of 25 ohms and a power dissipation of 740mW. The MOSFET operates within a temperature range of -55°C to 150°C.
PackageTO-92
Resistance25R
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip TP2535N3-P003-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -86mA |
| Drain to Source Breakdown Voltage | -350V |
| Drain to Source Resistance | 25R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 25R |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TP2535N3-P003-G Datasheet
Download the complete datasheet for Microchip TP2535N3-P003-G to view detailed technical specifications.
No datasheet is available for this part.
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