The TP2535N3-P013-G is a P-channel FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -86mA and a drain to source breakdown voltage of -350V. The device has a drain to source resistance of 25R and a power dissipation of 740mW. It is packaged in a TO-92 package and is available in quantities of 2000 per reel.
Microchip TP2535N3-P013-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -86mA |
| Drain to Source Breakdown Voltage | -350V |
| Drain to Source Resistance | 25R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 25R |
| Turn-Off Delay Time | 20ns |
| RoHS | Compliant |
No datasheet is available for this part.
