The VN2106N3-G P013 is a high-power N-CHANNEL MOSFET from Microchip, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1W and a continuous drain current of 53A. The device is packaged in a TO-92-3 package, suitable for tape and reel packaging. It has a drain to source voltage of 60V and a drain to source resistance of 6R. The gate to source voltage is 20V, with a fall time of 5ns and a turn-off delay time of 6ns.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip VN2106N3-G P013 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VN2106N3-G P013 Datasheet
Download the complete datasheet for Microchip VN2106N3-G P013 to view detailed technical specifications.
No datasheet is available for this part.
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