The VN2106N3-GP003 is a single N-channel power MOSFET from Microchip with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 60V and a continuous drain current of 300mA. The device has a maximum power dissipation of 1W and a package quantity of 2000 units per reel. The TO-92-3 package has dimensions of 5.33mm in height, 5.21mm in length, and 4.19mm in width, with a weight of 0.016oz. The device is suitable for use in a variety of applications requiring a high level of current and voltage handling.
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| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
